| PART |
Description |
Maker |
| APT10M09LVFR APT10M09B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 100V 100A 0.009 Ohm
|
Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10M19BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10M25BVFR APT10M25 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.025 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 100BGQ100J 100BGQ100 |
100V 100A Schottky Discrete Diode in a PowIRtab (Short) package
100V 100A Schottky Discrete Diode in a PowIRtab package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| FSPJ160F3 FSPJ160D1 FSPJ160F4 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 70A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 70A条（丁）|54AA
70 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
PanJit International, Inc.
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M16LLL APT20M16B2LL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
POWER MOS 7 200V 100A 0.016 Ohm
|
Advanced Power Technology Ltd.
|
| SUM60P05-11LT SUM60P05-11LT-E3 |
60 A, 55 V, 0.011 ohm, P-CHANNEL, Si, POWER, MOSFET D2PAK-5
60 A, 55 V, 0.011 ohm, P-CHANNEL, Si, POWER, MOSFET ROHS COMPLIANT, D2PAK-5
|
Vishay Intertechnology, Inc.
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-01 ST |
N-CHANNEL 30V - 0.0026 W -100A D??AK/I??AK/TO-220 STripFET??II POWER MOSFET
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.0026 W -100A D?PAK/I?PAK/TO-220 STripFET⑩ II POWER MOSFET
N-CHANNEL 30V - 0.0026 W -100A DPAK/IPAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 30V - 0.0026 W -100A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 30V - 0.0026 W -100A D?PAK/I?PAK/TO-220 STripFETII POWER MOSFET
N沟道30V 0.0026欧姆- 100号A D2PAK/I2PAK/TO-220 STRIPFET二功率MOSFET
N沟道30V 0.0026的W - 100号A?巴基斯我?PAK/TO-220 STripFET⑩二功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
