| PART |
Description |
Maker |
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 1SS392 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| MA3ZD12W |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| DSR05S30CTB |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| SCS0240DF SCS0240DF-15 |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| SDB412WS |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RKD705WKKRP RKD705WKKRH |
Silicon Epitaxial Schottky Barrier Diode for Detector
|
Renesas Electronics Corporation
|
| ZUMD54C |
SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diodes Incorporated
|
| SCS521DS |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| HN20S01FU |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
| RB521S-40 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
