| PART |
Description |
Maker |
| V54C3256 V54C3256804VS V54C3256404VS V54C3256404VT |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| HYB25D256800BTL-5A HYB25D256800BT HYB25D256800BT-5 |
DDR SDRAM Components - 256Mbit (32Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR400
256MBit Double Data Rata SDRAM
|
INFINEON[Infineon Technologies AG]
|
| K4H560438E-ULAA K4H560838E-ULAA K4H560438E-UCAA K4 |
256Mb E-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4N56163QF-GC25 K4N56163QF-GC30 K4N56163QF-GC37 |
256Mbit gDDR2 SDRAM
|
Samsung Electronic
|
| K4J55323QG K4J55323QG-BC12 K4J55323QG-BC14 K4J5532 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC14 K4J5 |
256Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| HYB25D256400AT-7 HYB25D256800AT-7 HYB25D256400AT-8 |
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR 200 (2-2-2) End-of-Life
256Mbit (64Mx4) DDR266A (2-3-3) ？的256Mbit4Mx4）DDR266A-3-3）？
|
Infineon Technologies AG
|
| HYB25D256160CC-6 HYB25D256400CC-5 HYB25D256400CC-6 |
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR400 (3-3-3); available 2Q04
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3); available 2Q04
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) Available 2Q04
DDR SDRAM Components - 256Mb (16Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
|
Infineon
|
| HY57V281620HCT-H HY57V281620HCLT-K |
SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
