PART |
Description |
Maker |
SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30 Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
KMB7D1DP30QA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
KMB7D0DN40QB |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
KMD7D5P40QA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
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APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
IXTP3N120 IXTA3N120 IXTP3N110 IXTA3N110 |
Discrete MOSFETs: Standard N-channel Types High Voltage Power MOSFETs
|
IXYS[IXYS Corporation]
|
SPU09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK RDSon = 0.25
|
Infineon
|
SPP80N06S2-09 SPB80N06S2-09 |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO211P |
OptiMOS -P Small-Signal-Transistor Low Voltage MOSFETs - Product Type
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|