| PART |
Description |
Maker |
| PALCE16V8-10 PALCE16V8-15 PALCE16V8-15JC PALCE16V8 |
Flash-Erasable Reprogrammable CMOS PAL Device 闪光可擦除可再编程的CMOS PAL制式设备
Flash-Erasable Reprogrammable CMOS PAL Device FLASH PLD, 7.5 ns, PQCC20
Flash-Erasable Reprogrammable CMOS PAL Device FLASH PLD, 25 ns, PDIP20
Flash-Erasable Reprogrammable CMOS PAL Device FLASH PLD, 25 ns, PQCC20
Flash-Erasable Reprogrammable CMOS PAL Device FLASH PLD, 15 ns, CDIP20
Flash-Erasable Reprogrammable CMOS PAL Device FLASH PLD, 25 ns, CDIP20
Flash-Erasable Reprogrammable CMOS PAL Device FLASH PLD, 10 ns, PQCC20
Flash Erasable, Reprogrammable CMOS PAL
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CYPRESS[Cypress Semiconductor]
|
| PALCE20V8 PAL20V8 CE20V8 PALCE20V8L-25QI PALCE20V8 |
Flash Erasable/ Reprogrammable CMOS PAL Device
Flash Erasable,Reprogrammable CMOS PAL Device
Flash Erasable, Reprogrammable CMOS PAL Device
From old datasheet system
|
CYPRESS[Cypress Semiconductor]
|
| PALC22V10D |
FLASG ERASABLE REPROGRAMMABLE CMOS PAL DEVICE
|
CYPRESS[Cypress Semiconductor]
|
| APA600 APA075 APA450 APA300 APA150 |
(APAxxx) 2nd Generation Reprogrammable Flash Fpgas
|
Actel Corporation
|
| CY7C291A-25JC CY7C291A-25PC CY7C291A-35JC CY7C291A |
2K x 8 Reprogrammable PROM 2K X 8 OTPROM, 35 ns, PDIP24
2K x 8 Reprogrammable PROM 2K X 8 OTPROM, 50 ns, PDIP24
2K x 8 Reprogrammable PROM 2K X 8 UVPROM, 50 ns, CDIP24
MICROMINIATURE POLARIZED LATCHING RELAY
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| M45PE10 |
Page-Erasable Serial Flash Memory
|
ST Microelectronics
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
| P89LPC935FA P89LPC936 P89LPC936FDH P89LPC935FHN P8 |
8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB 3 V byte-erasable Flash with 8-bit A/D converters
8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB/16 kB 3 V byte-erasable Flash with 8-bit ADCs
|
PHILIPS[Philips Semiconductors]
|
| P89LPC933 P89LPC935FHN P89LPC936FDH P89LPC933FDH P |
8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB 3 V byte-erasable Flash with 8-bit A/D converters
8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB/16 kB 3 V byte-erasable Flash with 8-bit ADCs
|
PHILIPS[Philips Semiconductors]
|
| M45PE40 M45PE40-VMP6G M45PE40-VMP6TG M45PE40-VMP6T |
4 Mbit Uniform Sector, Serial Flash Memory
From old datasheet system
4 MBIT, LOW VOLTAGE, PAGE-ERASABLE SERIAL FLASH MEMORY WITH BYTE-ALTERABILITY AND A 33 MHZ SPI BUS INTERFACE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| P89LPC970FDH P89LPC972FDH P89LPC972FN P89LPC970 |
8-bit microcontroller with accelerated two-clock 80C51 core 2 kB/4 kB/8 kB wide-voltage byte-erasable flash
|
NXP Semiconductors
|
