| PART |
Description |
Maker |
| UMG2N EMG2 FMG2A |
Emitter common (dual digital transistors)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| UMG3N FMG3A EMG3 |
Emitter common (dual digital transistors)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| UMG8N FMG8A EMG8 |
Emitter common (dual digital transistors)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| UA11J UA11JG-AL5-R UA11J-15 |
EMITTER COMMON DUAL DIGITAL TRANSISTORS)
|
Unisonic Technologies
|
| UMA6N EMA6 |
Emitter common (dual digital transistors)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| UG8J-AL5-R |
EMITTER COMMON (DUAL DIGITAL TRANSISTORS)
|
Unisonic Technologies
|
| FMG11A UMG11N EMG11 |
Transistors > Complex Digital Transistors
Emitter common (dual digital transistors)
|
Rohm
|
| MTE108CL-J |
Infrared Emitter
5mm Metal Can IR Emitter
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
