| PART |
Description |
Maker |
| FA5301 FA5301BP FA5301BPN FA5301BN |
Bipolar IC for switching power supplay control
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| MJE18204-D |
SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
ON Semiconductor
|
| MJE13007-TA3-T MJE13007-TF3-T MJE13007L-TA3-T MJE1 |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
UTC[Unisonic Technologies]
|
| FA5332P FA5332PM FA5331P FA5331PM FA5332M FA5331M |
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 220 kHz SWITCHING FREQ-MAX, PDIP16
Bipolar IC For Power Factor Correction 1.5 A POWER FACTOR CONTROLLER, 150 kHz SWITCHING FREQ-MAX, PDIP16
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| FA7622CP FA7622CPE FA7622CE |
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
|
| FA5316P FA5311BP FA5317P FA5310BP |
Bipolar IC for Switching Power Supply Control
|
Fujitsu
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
|
TOSHIBA
|
