| PART |
Description |
Maker |
| HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) 256M超过16057型快闪记忆体部门71299072位）
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| HN29V25611ANBSP HN29V25611A HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
| HN29W25611 HN29W25611T-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
HITACHI[Hitachi Semiconductor]
|
| HN29W25611T HN29W25611T-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
HITACHI[Hitachi Semiconductor]
|
| K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EN27LN2G08 |
2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
|
Eon Silicon Solution In...
|
| MX25L25835E MX25L25835EMI10G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L25635E MX25L25635EMI12G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
| K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| LH28F008SCHT LH28F008SCHT-85 LH28F008SCN-L120 LH28 |
8MBIT (1 MB x 8)Smart Voltage Flash Memory 40pin STSOP
8Mbit Flash Memory
8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY
8MBIT (1 MB x 8)Smart Voltage Flash Memory 44pin PSOP
|
Sharp Electrionic Components
|
