| PART |
Description |
Maker |
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH10N170 |
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 ECN3067SLV ECN3067SLR |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
| ECN3061 ECN3061SPR ECN3061SP ECN3061SPV |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN3063 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4104AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3651-4.2 |
Monolithic 4A High Voltage Li-Ion Battery Charger
|
Linear Technology
|
