| PART |
Description |
Maker |
| BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BCX52-16-E6327 BCX51-16 |
PNP Silicon AF Transistors
For AF driver and output stages
|
Infineon Technologies AG
Infineon Technologies A...
|
| BCX55-16 BCX54-16 BCX56-10 BCX56-16 |
For AF driver and output stages
For AF driver and output stages
|
Infineon Technologies A...
|
| BCP70 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current)
|
Siemens
|
| TDA2577A |
SYNCHRONIZATION CIRCUIT WITH VERTICAL OSCILLATOR AND DRIVER STAGES
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| 2N3055 Q62702-U58 |
NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| GBC327 |
The GBC327 is designed for drive and output-stages of audio amplifiers
PNP EPITAXIAL TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| Q62702-C2373 BC857S BC857SQ62702C2373 |
TRANSISTOR SOT363
PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
