| PART |
Description |
Maker |
| TGF4260-EPU |
9.6mm Discrete HFET C BAND, Si, RF SMALL SIGNAL, HFET
|
TriQuint Semiconductor, Inc.
|
| TGF4260 TGF4260-EPU |
9.6mm Discrete HFET
|
TRIQUINT[TriQuint Semiconductor]
|
| HFET2MI |
0.5-μm HFET 2MI
0.5-レm HFET 2MI
|
TriQuint Semiconductor
|
| FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PC |
1/2 - Watt HFET
|
WJ Communication. Inc.
|
| SHF-0289 |
DC-3 GHz 1.0 Watt GaAs HFET
DC-3 GHz, 1.0 Watt GaAs HFET
DC-3 GHz/ 1.0 Watt GaAs HFET
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SHF-0198 |
DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET
|
STANFORD[Stanford Microdevices]
|
| FP1189 |
High Performance ?-Watt HFET(Heterostructure FET)
High Performance ?-Watt HFET(Heterostructure FET)
High Performance ??Watt HFET(Heterostructure FET)
|
List of Unclassifed Manufacturers
ETC
N.A.
|
| MMH3111NT108 |
Heterostructure Field Effect Transistor (GaAs HFET)
|
Freescale Semiconductor, Inc
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging
10-Bit D-Type Latch
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器
8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
