| PART |
Description |
Maker |
| GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT2 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
Freescale Semiconductor...
|
| MRF13750HS |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| LET9006 |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMicroelectronics
|
| LET9060S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| LET20030S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
