| PART |
Description |
Maker |
| MP4403 |
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| MP4210 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4410 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| TLP197G |
TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET
|
Toshiba Semiconductor
|
| TLP3111 |
Photocoupler GaAs Ired & Photo .MOS FET
TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET
TOSHIBA Photocoupler GaAs Ired & Photo-MOS FET
|
Toshiba Semiconductor
|
| TLP3111 |
TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET
|
Toshiba Semiconductor
|
| PF08109B |
MOS FET Power Amplifier Module
|
Hitachi
|
| 2SK2887 A5800304 |
Transistors > MOS FET > Power MOS FET
Switching (200V, 3A)
From old datasheet system
|
ROHM[Rohm]
|
| PF0311 |
MOS FET Power Amplifier Module for VHF Band
|
HITACHI[Hitachi Semiconductor]
|
| PM50502C |
SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
|
| M67799SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
