PART |
Description |
Maker |
K7N161845M K7N163645M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM 512Kx36 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7S1618T4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7S1636T4C K7S1618T4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7S1636U4C K7S1618U4C-EC330 |
512Kx36 & 1Mx18 QDR II b4 SRAM QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor Maxim Integrated Products, Inc.
|
K7N163601M K7N161801M |
512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
|
SAMSUNG[Samsung semiconductor]
|
K7N163645M K7N161845M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7Q161862 K7Q161862B K7Q163662B |
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM736V989 KM718V089 |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung Electronic Samsung semiconductor
|
K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7M161825M |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
Samsung semiconductor
|