| PART |
Description |
Maker |
| BA1283-GS08 |
DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
|
Vishay Semiconductors
|
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| ADN9001-91 AMM9001-91 ADN3002-23 ADN3002-51 ADN300 |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| DDB3268-000 |
SILICON, X BAND, MIXER DIODE
|
|
| DB3263-000-130-011 |
SILICON, KU BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| HSMS-8202-TR2G |
SILICON, X-KU BAND, MIXER DIODE
|
AGILENT TECHNOLOGIES INC
|
| BAR18FILM |
SILICON, UHF BAND, MIXER DIODE
|
ST Microelectronics
|
| BA482AMO BA484AMO BA483AMO |
SILICON, VHF BAND, MIXER DIODE, DO-34
|
NXP Semiconductors N.V.
|
| HSCH-9201TC494 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
AGILENT TECHNOLOGIES INC
|
| 1SS154 |
DIODE (UHF~S BAND MIXER/DETECTOR APPLICATIONS)
|
Toshiba Semiconductor
|
|
