| PART |
Description |
Maker |
| M38503E4SS M38503MXH M37516RSS M38504E6FP M38504E6 |
RAM size:768 bytes; single-chip 8-bit CMOS microcomputer
RAM size:896 bytes; single-chip 8-bit CMOS microcomputer
RAM size:192 bytes; single-chip 8-bit CMOS microcomputer
RAM size:256 bytes; single-chip 8-bit CMOS microcomputer
Single Chip 8-Bit CMOS Microcomputer
3850 Series Microcontrollers: General Purpose with A/D Converter
RAM size:1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size:640 bytes; single-chip 8-bit CMOS microcomputer
RAM size:384 bytes; single-chip 8-bit CMOS microcomputer
RAM size:512 bytes; single-chip 8-bit CMOS microcomputer
RAM size:1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size:2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M38223M4M-145HP M38223M4-182FP M38223M4-183FP M382 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
3822 Series Microcontrollers: On-Chip Segment LCD Drivers with A-D Converters
RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
| UPD2101AL UPD2101AL-2 UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC
|
| UPD2101AL-4 |
1024 BIT (256 X 4) STATIC MOS RAM WITH SEPARATE I/O
|
NEC Corp.
|
| IDT72211L35L IDT72201L20J IDT72201L50JB IDT72211L5 |
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
|
Integrated Device Technology
Integrated Device Techn...
|
| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| AM29F400BT-90FC AM29F400BT-90EIB AM29F400BT-90SE |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
|
| AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| CAT22C10 22C10 CAT22C10P-30TE13 CAT22C10J-20TE13 C |
256-Bit Nonvolatile CMOS Static RAM
256-Bit Nonvolatile CMOS Static RAM 256位非易失性的CMOS静态RAM
256-BitNonvolatileCMOSStaticRAM
|
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| PCF85103C2D PCF85103C-2P-00 PCF85103C-2P/0011 PCF8 |
PCF85103C-2; 256 x 8-bit CMOS EEPROM with I²C-bus interface
256 x 8-bit CMOS EEPROM with I2C-bus interface
|
Philips
NXP Semiconductors N.V.
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
