| PART |
Description |
Maker |
| UPD72042 UPD72042GT |
LSI DEVICES FOR Inter Equipment BusTM (IEBusTM) PROTOCOL CONTROL
|
http://
NEC Corp.
|
| LC74782M |
On-Screen Display Controller LSI for VCR Products(用于录象机的屏幕显示控制器的大规模集成电路（LSI 屏幕显示控制器芯片的录像机产品（用于录象机的屏幕显示控制器的大规模集成电路（LSI）的
|
Sanyo Electric Co., Ltd.
|
| M52768FP |
PLL-INTER VIF/SIF
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LV2105V LV2105 |
530 MHz PLL Frequency Synthesizer LSI
Bi-CMOS LSI
|
SANYO[Sanyo Semicon Device]
|
| LC895195 |
CMOS LSI
ATA-PI (IDE) CD-ROM Decoder LSI
|
SANYO[Sanyo Semicon Device]
|
| LAN9730-ABZJ LAN9730-ABZJ-TR LAN9730I-ABZJ-TR |
High-Speed Inter-Chip (HSIC) USB 2.0
|
SMSC Corporation
|
| LC895925 |
Signal Processing LSI for CD-R Drives
CMOS LSI
|
Sanyo Semicon Device
|
| LC73862 LC73861 |
CMOS LSI
DTMF Receiver LSI
|
SANYO[Sanyo Semicon Device]
|
| GM2115 GM2125 |
ANALOG INTER FACE XGA/SXGA ONPANEL LCD PANEL CONTROLLER
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
|
