PART |
Description |
Maker |
29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD DIODE SCHOTTKY 45V 2X20A TO247AD MOSFET N-CH 500V 14A TO-247AD Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32 MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32 2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
KM641003C |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
EN29F002 EN29F002N EN29F002T-70J EN29F002T-90TI EN |
2 Megabit (256K x 8-bit) Flash Memory 2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V -10% for both read/write operation. With RESET function.
|
Eon Silicon Solution N.A. ETC[ETC]
|
PDM41257SA7SOTY PDM41257SA7SOTR PDM41257LA7SOTY PD |
256K static RAM 256K x 1-bit x1 SRAM
|
PARADIGM
|
MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM Macronix International Co., Ltd.
|
MX29LV400CBXHI-70Q MX29LV400CTXHI-70Q 29LV400C-90 |
4分位[12k × 8 / 256K × 16] CMOS单电V时仅闪存 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO44 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PDSO48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PBGA48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
|
HN27C256H HN27C256HFP-10T HN27C256HFP-85T HN27C256 |
256K (32K x 8-bit) UV and OTP EPROM, 70ns 256K (32K x 8-bit) UV and OTP EPROM, 85ns 256K (32K X 8-BIT) UV AND OPT EPROM
|
Hitachi Semiconductor
|
HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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