| PART |
Description |
Maker |
| BR34E02NUX-WTR |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| NCP51190 |
1.5A DDR Memory Termination Regulator
|
ON Semiconductor
|
| SPC5200CBV400B SPC5200CVR400B SPC5200VVR266B MPC52 |
SDRAM/DDR Memory Controller
|
FREESCALE[Freescale Semiconductor, Inc]
|
| SC1480 SC1480EVB SC1480ITSTR SC1480ITSTRT |
DDR Memory Power Supply Controller
|
Semtech Corporation
|
| SE98 |
DDR memory module temp sensor, 3.3 V
|
NXP Semiconductors
|
| EV20073DH-00A |
2A, 1.30V ?6.0V DDR Memory VTT Termination Regulator
|
Monolithic Power System...
|
| SE97 SE97TL SE97TK SE97TP |
DDR memory module temp sensor with integrated SPD, 3.3 V
|
NXP Semiconductors
|
| NE57811 NE57811S |
Advanced DDR memory termination power with shutdown 先进的DDR存储器终端电源与关机
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
