| PART |
Description |
Maker |
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| BD135 BD139 ON0184 BD137 |
Plastic Medium Power Silicon NPN Transistor 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-225AA
POWER TRANSISTORS NPN SILICON
CASE 77-09 TO-225AA TYPE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| BUV11 |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| GL3904 |
N P N E P I TA X I A L P L A N A R T R A N S I S TO R
NPN EPITAXIAL PLANAR TRANSISTO
|
E-Tech Electronics LTD
GTM CORPORATION
|
| BDV65B BDV65A BDV65C |
Silicon NPN Power Transistors
Silicon NPN Darlington Power Transistor
|
Inchange Semiconductor Company Limited
|
| MRF20060RS |
NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) L BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(NPN纭??棰?????浣??)
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| 2N3716 2N3715 ON0040 |
Slllcon NPN Power Translstors
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS
From old datasheet system
|
Motorola Inc
ON Semi
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 2SD1480 |
Silicon NPN triple diffusion planar type(For power amplification) 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
|
| 2SC4892 |
Silicon NPN triple diffusion planar type(For power switching) 1 A, 800 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
