| PART |
Description |
Maker |
| 2SD1068 |
TENTATIVE
|
SONY[Sony Corporation]
|
| STK621-017 |
TENTATIVE
|
Sanyo Semicon Device
|
| RT8H042C |
This is tentative specification
|
Isahaya Electronics Corporation
|
| P0430WQLB-T |
Tentative Product Specification
|
AZ Displays
|
| P0340WQLC-T |
Tentative Product Specification
|
AZ Displays
|
| 2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
Unknow
|
| TC55VEM316AXBN55 TC55VEM316AXBN TC55VEM316AXBN40 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TC58NVG1S8BFT00 TC58NVG1S3BFT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD2067 2SD2067TENTATIVE |
2SD2067 (Tentative) - Silicon NPN epitaxial planer type
Silicon NPN epitaxial planer type(For low-frequency output amplification)
|
Panasonic Corporation
Panasonic Semiconductor
|
| 2SD2258 2SD2258TENTATIVE |
2SD2258 (Tentative) - Silicon NPN epitaxial planer type
Silicon NPN epitaxial planer type(For low-frequency output amplification)
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
