| PART |
Description |
Maker |
| LS4D18-270-RN LS4D18-3R3-RN LS4D18-560-RN LS4D18-2 |
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L PDIP 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual N-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel Programmable Matched Pair MOSFET Array, Enhancement Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L MSOP
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L SOIC
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http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| AD6472BS AD6472 |
2 Pair/1 Pair ETSI Compatible HDSL Analog Front End(21对的符合ETSI标准的HDSL模拟前端处理
|
Analog Devices, Inc.
AD[Analog Devices]
|
| AD6472 |
2 Pair/1 Pair ETSI Compatible HDSL Analog Front End
|
Analog Devices
|
| SI9942DY |
Complimentary 20-V (D-S) MOSFET
N/p-channel 30-V (D-S) Pair
|
Vishay Siliconix
|
| ALD1102APAL ALD1102ASAL ALD1102BPAL ALD1102BSAL AL |
DUAL P-CHANNEL MATCHED MOSFET PAIR
|
Advanced Linear Devices
|
| TPC8207 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
|
Toshiba Semiconductor
|
| ALD1103DB ALD1103 ALD1103PB ALD1103SB |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-21 RoHS Compliant: No
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
|
Advanced Linear Devices, Inc.
ALD[Advanced Linear Devices]
|
| SI4953DY |
Matched Pair of P-Channel Enhancement MOSFETs
From old datasheet system
|
Vishay
|
| 2SK2637 FW206 2SK2442 2SC4640 FTD1002 FW104 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO 晶体管| MOSFET的|配对| P通道| 30V的五（巴西）直|甲（丁）|
TRANSISTOR | MOSFET | P-CHANNEL | 12V V(BR)DSS | 2A I(D) | SO 晶体管| MOSFET的| P通道| 12V的五（巴西）直|甲（丁）|
|
Rectron Semiconductor
霍尼韦尔
|
| LS1608-100-RM LS1608-331-RM LS1608-103-RM LS1608-1 |
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L SOIC, EPAD Enabled
5.0mV Quad N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -3.5 V, Depletion Mode, 16L SOIC, EPAD Enabled
Surface Mount Power Inductors 1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -1.3 V, Depletion Mode, 16L SOIC, EPAD Enabled 1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 16L PDIP, EPAD Enabled 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= -0.4 V, Depletion Mode, 8L SOIC, EPAD Enabled
|
ICE Components, Inc.
ICE COMPONENTS INC
|
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