| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CS51033 CS51033YD8 CS51033YDR8 CS51033YN8 |
Fast PFET Buck Controller Does Not Require Compensation 快速PFET的降压控制器不要求补
|
Cherry Semiconductor Corpor...
CHERRY[Cherry Semiconductor Corporation]
ZF Electronics Corporation
ZF Electronics, Corp.
|
| HE83R123 |
oscillator clocks. This chip is suitable for the applications that require higher performance
|
King Billion Electronics Co., Ltd.
|
| AWT921 |
From old datasheet system
900MHz Integrated Power Amp
The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point.
|
ANADIGICS, Inc.
Anadigics Inc
|
| H7EC H7EC-B H7EC-BL H7EC-BLM H7EC-BM H7EC-BV H7EC- |
Self-Powered Counters Subminiature Count Totalizers Require No External Power Supply
|
http://
OMRON[Omron Electronics LLC]
|
| XC2500M-03P XC3500M-03P XC2500M-03S XC3500M-03S XC |
Hybrid Coupler 3 dB, 90隆?
Hybrid Coupler 3 dB, 90掳
Hybrid Coupler 3 dB, 90°
|
Anaren Microwave
http://
|
| TCIHG TCIHG-S0072 |
Isolator Hybrid Combination
Green 1550(1585)nm Tap Coupler / Isolator Hybrid Combination
|
OPLINK Communications I...
|
| HJF-A-500SQ |
0/180隆? HYBRID JUNCTION
0/180° HYBRID JUNCTION
|
Merrimac Industries, Inc.
|
| DQP-90-450 |
90o HYBRID MODEL
90ì HYBRID MODEL
|
SYNERGY MICROWAVE CORPORATION
|
| 3032 3032SERIES 3032-6017-00 3032-6019-00 |
CRYSTAL, 3.686400MHZ 20PF HC-49
90?Crossover Hybrid Coupler 800-900锛?890-960. or 1700-1900 MHz
90Crossover Hybrid Coupler 800-900890-960. or 1700-1900 MHz 90？交叉混合耦合800-90090-960。兆赫或1700年至00
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 90？交叉混合耦合800-90090-960。兆赫或1700年至00
90 CROSSOVER HYBRID COUPLER 800-900/890-960/ OR 1700-1900 MHZ
90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ
|
PHOENIX CONTACT Deutschland GmbH
Tyco Electronics
|
| HY22-73 |
90 Degree Hybrid 2.1-2.3 GHz 90度混.1-2.3千兆
90 Degree Hybrid 2.1?.3 GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
