PART |
Description |
Maker |
K4S161622D-TC_L10 K4S161622D-TC_L55 K4S161622D-TC_ |
512K x 16Bit x 2 Banks Synchronous DRAM
|
Samsung semiconductor
|
HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz 64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM(工业温度))
|
Micron Technology, Inc.
|
HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
HY5DU281622 HY5DU281622LT-L HY5DU281622LT-H |
4 Banks x 2M x 16Bit Double Data Rate SDRAM
|
Hyundai
|
K4S28163LD-RFR |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
K4S561632D |
4M x 16Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
K4S561633C-RLN |
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet
|
Samsung Electronic
|
K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|