| PART |
Description |
Maker |
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| BSP121 |
N-channel enhancement mode vertical D-MOS transistor 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BSH203 BSH203_3 |
P-channel vertical D-MOS logic level FET P沟道垂直D-MOS逻辑电平场效应晶体管
From old datasheet system
P-channel enhancement mode
|
NXP Semiconductors N.V.
Philips
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| MMFTN20 |
N-Channel Enhancement Vertical D-MOS Transistor
|
Diotec Semiconductor
|
| BSP030 |
N-channel enhancement mode vertical D-MOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BSN274A BSN274 |
N-channel enhancement mode vertical D-MOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BSS192 |
P-channel enhancement mode vertical D-MOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BSP250 |
P-channel enhancement mode vertical D-MOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BSN205 BSN205A |
N-channel enhancement mode vertical D-MOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
