PART |
Description |
Maker |
LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-G |
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
|
Catalyst Semiconductor EEPROM ON Semiconductor NXP Semiconductors N.V.
|
EDS2532AABJ-6B-E EDS2532AABJ-6BL-E |
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
|
EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
EDD2508AKTA-5C-E EDD2508AKTA-5B-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
EDS1216AABH EDS1216CABH |
(EDS1216AABH / EDS1216CABH) 128M bits SDRAM (8M words x 16 bits)
|
Elpida Memory
|
EDD2504AKTA-6B-E EDD2504AKTA-7B-E |
256M bits DDR SDRAM (64M words x 4 bits)
|
Elpida Memory, Inc.
|
EDD2504AKTA-E EDD2504AKTA-6B-E EDD2504AKTA-7A-E ED |
256M bits DDR SDRAM (64M words x 4 bits)
|
ELPIDA[Elpida Memory]
|
EDD1216AATA-5 EDD1216AATA-5B-E EDD1216AATA-5C-E |
128M bits DDR SDRAM (8M words x 16 bits, DDR400)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V.
|
Aeroflex Circuit Technology
|