| PART |
Description |
Maker |
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| M68757L 68757L |
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO 硅场效应晶体管功率放大器06 - 870MHzW，便携式收音机调
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| PF0031 |
MOS FET Power Amplifier Module
|
Hitachi
|
| PF0031 |
MOS FET Power Amplifier Module for Mobile Phone
|
HITACHI[Hitachi Semiconductor]
|
| PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68742 68742 |
SILICON MOS FET POWER AMPLIFIER / 903-905MHz / 1.8W / FM PORTABLE RADIO
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 903-905MHz, 1.8W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M68757H 68757H |
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PF08134B |
ASSP>Mobile Phones>RF Power Amplifiers
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
From old datasheet system
|
RENESAS[Renesas Electronics Corporation]
|
| E2081606PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone 场效应晶体管功率放大器模块，电子GSM和DCS1800/1900三频手持电话
|
Renesas Electronics, Corp.
|
| MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| MP4403 |
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
