PART |
Description |
Maker |
K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S1 |
2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO44 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM Low Power SDRAM Industrial SDRAM 2M x 4 BANKS x 16 BIT SDRAM DRAM - Datasheet Reference
|
Winbond Electronics Corp WINBOND[Winbond]
|
K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks 2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
KM48S16030 KM48S16030T-G_F10 KM48S16030T-G_F8 KM48 |
4M x 8Bit x 4 Banks Synchronous DRAM 4M x 8Bit x 4 Banks Synchronous DRAM 4米8位4银行同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HY5756820CT HY5756820LT |
4 Banks x 8M x 8Bit Synchronous DRAM
|
Hynix Semiconductor
|
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
KM23C16000CET |
16M-Bit (2Mx8 /1Mx16)CMOS Mask ROM(16M(2Mx8 /1Mx16) CMOS掩膜ROM) 1,600位(2Mx8 / 1Mx16)的CMOS掩模ROM,600位(2Mx8 / 1Mx16)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM 128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|