| PART |
Description |
Maker |
| ADXL325 EVAL-ADXL325Z ADXL325BCPZ-RL ADXL325BCPZ-R |
Small, Low Power, 3-Axis ±5 g Accelerometer; Package: 16-LFCSP (4x4mm, stacked Die w/Glass seal 1.75mm); Temperature Range: -40°C to 125°C SPECIALTY ANALOG CIRCUIT, PQCC16
Small, Low Power, 3-Axis ±5 g Accelerometer
Small, Low Power, 3-Axis 隆戮5 g Accelerometer
|
Analog Devices, Inc.
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| CR3AMZ |
LOW POWER/ STROBE USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR2AM |
LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| AD621 AD621ARZ-R7 AD621AR-REEL AD621AR-REEL7 AD621 |
-18V; 650mW; low drift, low power instrumentation amplifier. For weigh scales, transduver interface and data acquisition systems
Low Drift, Low Power Instrumentation Amp with fixed gains of 10 and 100 INSTRUMENTATION AMPLIFIER, 185 uV OFFSET-MAX, 0.2 MHz BAND WIDTH, PDSO8
Low Cost,Low Power Instrumention Amplifier
|
Analog Devices, Inc.
|
| 2SB1628 2SB1628ZX 2SB1628-ZX-AZ |
3 A, 16 V, PNP, Si, POWER TRANSISTOR
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
Low-VCE(sat) bipolar transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
|
Omron Electronics, LLC
NEC Corp.
|
| FUF2005 FUF2007 FUF2006 FUF2004 FUF2003 FUF2002 FU |
50 V, 2 A glass passivated ultrafast recovery rectifier
100 V, 2 A glass passivated ultrafast recovery rectifier
200 V, 2 A glass passivated ultrafast recovery rectifier
400 V, 2 A glass passivated ultrafast recovery rectifier
800 V, 2 A glass passivated ultrafast recovery rectifier
1000 V, 2 A glass passivated ultrafast recovery rectifier
600 V, 2 A glass passivated ultrafast recovery rectifier
RECTIFIER DIODE, DO-15
Ultrafast Recovery Rectifiers 超快恢复二极
|
Fagor
International Rectifier, Corp.
Vishay Intertechnology, Inc.
|
| Q62703-Q1749 Q62703-Q2070 Q62703-Q3823 Q62703-Q382 |
LC 3 mm T1 LED, Diffused Low Current LED T-1 SINGLE COLOR LED, GREEN, 3 mm
DIODE, ZENER, 5.6V, 1W T-1 SINGLE COLOR LED, YELLOW, 3 mm
DIODE ZENER SINGLE 1000mW 5.1Vz 49mA-Izt 0.05 10uA-Ir 1Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 5.1Vz 49mA-Izt 0.05 10uA-Ir 1Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 6.2Vz 41mA-Izt 0.05 10uA-Ir 3Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 5.6Vz 45mA-Izt 0.05 10uA-Ir 2Vr DO41-GLASS 5K/REEL
LC 3 mm T1 LED Diffused Low Current LED
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MC3371 MC3371P MC3372 MC3372D MC3371D MC3371DTB MC |
LOW POWER FM IF
LOW POWER FM IF FM, AUDIO SINGLE CHIP RECEIVER, PDIP16
(MC3372) LOW POWER FM IF
- ContinuousShort Circuit Protection ( /P-Suffix)
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥
Bridge Rectifiers (Power) 桥式整流器（电力
10 Amp Glass Passivated Bridge Rectifier
10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
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