| PART |
Description |
Maker |
| 2SC5233 E007768 |
NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)
GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC2878A 2SC2878B |
For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SC5376 EE08405 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER/ FOR MUTING AND SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, FOR MUTING AND SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN1304 RN1306 RN1302 RN1303 RN1305 RN1301 RN1303TE |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications
Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SC332607 2SC3326 |
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
Toshiba Semiconductor
|
| 2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| 2SC523203 2SC5232 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
| 2SC4919 |
Muting Circuit Applications
|
Sanyo Semicon Device
|
| 2SA1864 |
Muting Circuit, Driver Applications
Muting Circuit Driver Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
