| PART |
Description |
Maker |
| 3SK258 E001712 |
N CHANNEL DUAL GATE MOS TYPE (TV/ FM TUNER VHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 3SK292 E007198 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 3SK256 E001710 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 3SK153 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
| 3SK257 E001711 |
N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER, VHF, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 3SK151 |
N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER/ VHF RF AMPLIFIER APPLICATIONS)
N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER, VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF909 BF909WR115 BF909WR135 |
N-channel dual gate MOS-FETs
|
NXP Semiconductors N.V.
|
| BF908WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
