PART |
Description |
Maker |
K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http:// Elpida Memory
|
UPD23C128000BLGY-XXX-MJH UPD23C128000BLGX-XXX UPD2 |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
HM5425161BTT-75A HM5425161BTT-75B HM5425401BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M; 133MHz LVTTL interface SDRAM 256M; 100MHz LVTTL interface SDRAM
|
Elpida Memory
|
K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K8 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory From old datasheet system Optocoupler with Phototransistor Output XTAL MTL T/H HC49/U
|
Samsung Electronic TFUNK Vishay Telefunken Vishay Intertechnology,Inc.
|
UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
HMT112U6AFP8C-G7 HMT112U6AFP8C-G8 HMT112U6AFP8C-H8 |
240pin DDR3 SDRAM Unbuffered DIMMs 64M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 128M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 256M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 128M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 256M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 256M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EM6GE16EWXC EM6GE16EWXC-12H |
256M x 16 bit DDR3 Synchronous DRAM
|
EtronTech
|
TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|