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EDI88512CALPA-B32 - 20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 512Kx8 Monolithic SRAM SMD 5962-95600 512Kx8 Monolithic SRAM, SMD 5962-95600 SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600

EDI88512CALPA-B32_201103.PDF Datasheet

 
Part No. EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA-F32 EDI88512CA_LPA-F36 EDI88512CA_LPA-K EDI88512CA_LPA-N EDI88512CA_LPA-N36 EDI88512CA_LPA-T EDI88512CANB EDI88512LPAKM EDI88512LPAKC EDI88512LPANI EDI88512CATB EDI88512LPATB EDI88512LPAF36M EDI88512LPAF36I EDI88512LPAF36C EDI88512LPAF36B EDI88512LPAF32M EDI88512LPAF32I EDI88512LPAF32C EDI88512LPAF32B EDI88512CAB32M EDI88512CA/LPA-C EDI88512CA/LPA-K EDI88512CA/LPA-N EDI88512CA/LPA-N36 EDI88512CAB32I EDI88512LPAB32I EDI88512CA/LPA-F36 EDI88512LPAB32B
Description 20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600

File Size 265.80K  /  9 Page  

Maker

White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.



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 Full text search : 20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 512Kx8 Monolithic SRAM SMD 5962-95600 512Kx8 Monolithic SRAM, SMD 5962-95600 SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600


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5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 59 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
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