| PART |
Description |
Maker |
| MRFG35010MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35005ANT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRFG35030R5 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| LPD200MX |
HIGH PERFORMANCE PHEMT
PACKAGED HIGH DYNAMIC RANGE PHEMT
|
Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
|
| T1P3002028-SP |
20 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
|
TriQuint Semiconductor
|
| T1P3003028-SP |
30 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
|
TriQuint Semiconductor
|
| HMC490LP5 |
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER/ 12 - 16 GHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| AE618 |
E-pHEMT
|
RFHIC
|
| AE663 |
E-pHEMT
|
RFHIC
|
| FPD750 |
0.5W POWER PHEMT
|
Filtronic Compound Semiconductors
|
| AE362 |
E-pHEMT MMIC
|
RFHIC
|
| LP750 |
0.5 W POWER PHEMT
|
Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
|
