| PART |
Description |
Maker |
| K4S1G0732BNBSP K4S1G0732B-TC75 K4S1G0732B |
SDRAM stacked 1Gb B-die
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H |
Stacked 1Gb C-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H1G0438A-UC_LA2 K4H1G0438A-UC_LCC K4H1G0438AUC_L |
1Gb A-die SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4T1G164QE K4T1G044QE K4T1G084QE |
1Gb E-die DDR2 SDRAM
|
Samsung Electronics
|
| K4T1G164QD K4T1G084QD |
1Gb D-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4T1G044QA K4T1G164QA-ZCD5 K4T1G164QA-ZCE6 K4T1G04 |
1Gb A-die DDR2 SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4T1G164QD K4T1G084QD |
(K4T1G084QD / K4T1G164QD) 1Gb A-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_ |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
SAMSUNG[Samsung semiconductor]
|
| WV3EG128M72EFSR335D3SG |
1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA 1GB 128Mx72 DDR SDRAM的注册瓦锁相环，FBGA封装
|
Electronic Theatre Controls, Inc.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
