| PART |
Description |
Maker |
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| ECH8668 |
Power MOSFET, 20V, 7.5A, 17mOhm, -20V, -5A, 38mOhm, Complementary Dual ECH8
|
ON Semiconductor
|
| IRF7204 IRF7204TR |
TRI N PLUG M 0-48 NO SEAL
Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| NTF6P02T3 NTF6P02T3-D NTF6P02T3G NTF6P02T3/D |
Receptacle With A Wire Wrap Tail NTF6P02T3
Power MOSFET -6.0 Amps, -20 Volts P?Channel SOT23(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET -6.0 Amps, -20 Volts P??annel SOT?23
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223
20V P-ch HD3e SOT223
|
ONSEMI
ON Semiconductor
|
| STT5NF20V |
N-CHANNEL 20V - 0.030 ohm - 5A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET
N-CHANNEL 20V 0.030 OHM 5A SOT23-6L 2.7-DRIVE STRIPFET II POWER MOSFET
N-CHANNEL 20V - 0.030 ohm - 5A SOT23-6L 2.7V-DRIVE STripFETII POWER MOSFET N沟道20V 0.030欧姆- 5A条采用SOT23 - 6L 2.7 -驱动STripFET⑩二功率MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
|
| CDBW120-G |
Schottky Barrier Rectifiers Diodes, V-RRM=20V, V-R=20V, I-O=1A
|
Comchip Technology
|
| IRF7663 IRF7663TR |
Trench Technology
Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-20V/ Rds(on)=0.020ohm)
|
IRF[International Rectifier]
|
| IRF7F3704 |
HEXFET? POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
|
IRF[International Rectifier]
|
| LT4250L LT4250H |
-20V to -80V, SO-8, Active Low Power Good
-20V to -80V, SO-8, Active High Power Good
|
Linear
|
| STT4PF20V |
P-CHANNEL 20V - 0.090 W - 3A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET P通道20V 0.090 3A条采用SOT23 - 6L 2.7 -驱动STripFET？？二功率MOSFET
P-CHANNEL 20V - 0.090 OHM - 3A SOT23-6L 2.7V-DRIVE STRIPFET II POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
