PART |
Description |
Maker |
CY7C4245V CY7C4425V CY7C4205V CY7C4235V CY7C4215V |
64/256/512/1K/2K/4K x18 Low-Voltage Synchronous FIFOs From old datasheet system
|
Cypress
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CY7C421-15AXC CY7C421-20VXC |
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 15 ns, PQFP32 256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 20 ns, PDSO28
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Cypress Semiconductor, Corp.
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IDT72V3643L10PF IDT72V3633 IDT72V363310PF IDT72V36 |
From old datasheet system 3.3 VOLT CMOS SyncFIFO WITH BUS-MATCHING 256 x 36, 512 x 36, 1,024 x 36 512 x 36 SyncFIFO, 3.3V
|
IDT[Integrated Device Technology]
|
AM29SL400DT100WAF AM29SL400DB90 AM29SL400DB90WAC A |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
|
SPANSION[SPANSION] AMD[Advanced Micro Devices]
|
IDT72201L20J IDT72201L20JB IDT72211L20J IDT72211L2 |
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 CMOS SyncFIFOO 64 X 9 256 x 9 512 x 9 1024 X 9 2048 X 9 and 4096 x 9 CMOS SyncFIFOO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
|
IDT[Integrated Device Technology]
|
CY7C4851-10AC CY7C4851-10AI CY7C4851-15AI CY7C4801 |
256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs 8K X 9 BI-DIRECTIONAL FIFO, 8 ns, PQFP64 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs 4K X 9 BI-DIRECTIONAL FIFO, 10 ns, PQFP64 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs 4K X 9 BI-DIRECTIONAL FIFO, 15 ns, PQFP64 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs 4K X 9 BI-DIRECTIONAL FIFO, 20 ns, PQFP64 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs 1K X 9 BI-DIRECTIONAL FIFO, 15 ns, PQFP64 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs 1K X 9 BI-DIRECTIONAL FIFO, 10 ns, PQFP64 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs 1K X 9 BI-DIRECTIONAL FIFO, 20 ns, PQFP64
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
IDT70T3319S133BF IDT70T3319S133BC IDT70T3319S133DD |
JFET-Input Operational Amplifier 8-SOIC 0 to 70 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高.5V12/256/128K X 18 SYNCHRONOU S双,端口静态与3.3V.5V的内存界 JFET-Input Operational Amplifier 8-TSSOP 0 to 70 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 JFET-Input Operational Amplifier 8-SO 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA208
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
M24512-HR M24512-R M24256-BHR M24256-BR M24512-WDW |
64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 512 Kbit and 256 Kbit serial I?C bus EEPROM with three Chip Enable lines 512 Kbit and 256 Kbit serial I虏C bus EEPROM with three Chip Enable lines 512 Kbit and 256 Kbit serial I2C bus EEPROM with three Chip Enable lines
|
STMicroelectronics
|
AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op. Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes Am29LV400B KGD (Known Good Die Supplement) INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位).0伏的CMOS只引导扇区闪 CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http:// AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. Electronic Theatre Controls, Inc.
|
AL4CS215 AL4CS205 |
256, 512, 1K, 2K, 4K x 18 Synchronous FIFOs
|
AverLogic Technologies, Inc.
|
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