| PART |
Description |
Maker |
| HMC346G8 |
GaAs MMIC HERMETIC SMT VOLTAGEVARIABLE ATTENUATOR, DC - 8 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| HMC168C8 |
50,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs MMIC SMT DOUBLEBALANCED MIXER/ 4.5 - 8 GHz
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 8 GHz
|
Hittite Microwave Corpo...
美国讯泰微波有限公司上海代表
Hittite Microwave Corporation
|
| HMC346C8 HMC346C808 |
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz
|
http://
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC361G8 |
SMT GaAs HBT MMIC
|
Hittite Microwave Corporation
|
| HMC220AMS8 220AMS8E |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 5 - 12 GHz
|
Hittite Microwave Corporation
http://
|
| HMC433 |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 8.0 GHz
|
Hittite Microwave Corporation
|
| HMC493LP3 |
SMT GaAs HBT MMIC DIVIDE-BY-4/ DC - 18 GHz
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 18 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC362S8G06 HMC362S8G 362S8GE |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12.0 GHz
|
Hittite Microwave Corpo...
http://
Hittite Microwave Corporation
Hittite Microwave Corporati...
|
| HMC362S8G |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 12.0 GHz
SMT GaAs HBT MMIC DIVIDE-BY-4/ DC - 12.0 GHz
|
http://
HITTITE[Hittite Microwave Corporation]
美国讯泰微波有限公司上海代表
|
| HMC170C8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 2.5 - 4 GHz
|
美国讯泰微波有限公司上海代表
|
