| PART |
Description |
Maker |
| TT21 TT22 |
BEAM TETRODES
|
ETC
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MRF134 |
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From old datasheet system
VHF POWER MOSFET
|
ADVANCED SEMICONDUCTOR INC
|
| TUA2009XS TUA2009X |
VHF I / VHF II / UHF-Tuner IC
From old datasheet system
|
Infineon
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| RFM08U9X |
RF POWER MOSFET FOR VHF.AND UHF.BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| KV1401 KV1801 KV1501 KV1501-17 KV1601 |
VARACTOR DIODES HF/VHF Super Hyperabrupt Junction TM
VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
http://
MICROSEMI CORP-LOWELL
|
| KIC9307AF-019 |
Digital Tuning System For Portable Audio Equipment,Provided With 5 Bands Of TV(VHF,UHF)/FM/SW/MW/LM(用于便携式音频设备的数字调谐系统（具TV(VHF,UHF)/FM/SW/MW/LM五波段调谐功能）)
|
KEC Holdings
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
