PART |
Description |
Maker |
MP4711 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation Toshiba Semiconductor
|
SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开 From old datasheet system N-channel MOS type field effect transistor
|
NEC, Corp. NEC[NEC]
|
2SK152906 2SK1529 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
RJM0407JSC RJM0407JSC-00-12 |
40 V - 20 A - N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
GT60M303 EE07978 |
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor
|
GT60M302 E001943 |
From old datasheet system N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|