| PART |
Description |
Maker |
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5785 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SA1357 E000517 |
TRANSISTOR (STROBE FLASH/ AUDIO POWER AMPLIFIER APPLICATIONS)
TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIERAPPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5755 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC6100 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
Toshiba Semiconductor
|
| 2SA206009 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
Toshiba Semiconductor
|
| 2SC468405 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1327A 2SA1327A06 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications
|
TOSHIBA
|
