| PART |
Description |
Maker |
| SPU09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK RDSon = 0.25
|
Infineon
|
| BSP170P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
| BSP613P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.13
|
Infineon
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2SD313 2SD313D |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
POWER TRANSISTORS(3A/60V/30W)
POWER TRANSISTORS(3A,60V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| 2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-current gain Power Transistor(60V/ 3A)
High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
| BUZ31 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.2 Ohm, 14.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| IRFP048 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
|
International Rectifier
Power MOSFET
|
| IRFP044 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
|
International Rectifier
Power MOSFET
|
| BUZ350 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.12 Ohm, 22A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
