| PART |
Description |
Maker |
| BGD902MI BGD902 BGD902_902MI_6 |
860 MHz, 18.5 dB gain power
From old datasheet system
|
Philips
|
| BGD904MI BGD904 |
860 MHz, 20 dB gain power doubler amplifier
|
Philips
|
| CGY887B CGY887B_1 CGY887B-2015 |
860 MHz/ 27.8 dB gain push-pull amplifier
From old datasheet system
860 MHz, 27.8 dB gain push-pull amplifier
|
Quanzhou Jinmei Electronic ...
NXP Semiconductors
Philips Semiconductors
|
| MHW8272 |
27 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| BGY883_4 BGY883-2015 BGY883 |
From old datasheet system
860 MHz, 15 dB gain push-pull amplifier
|
Philips
Quanzhou Jinmei Electronic ...
|
| BGY888 |
860 MHz, 34 dB gain push-pull amplifier BGY888<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| MHW9182 MHW7182 MHW8182 |
18 dB GAIN 750/860/1000 MHz 110/128/152 CHANNEL CATV AMPLIFIERS
|
MOTOROLA[Motorola, Inc]
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| BGD802 |
Hybrid amplifier module operating at a supply voltage of 24 V (DC). BGD802<SOT115J|<<<1<Always Pb-free,;BGD802/02<SOT115J|<<<1<Always Pb-free,;
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
|
| 803048U-3/387 803018U-3/387 805048B-3/387 802006K- |
53000 MHz - 60000 MHz PARABOLIC ANTENNA, 25 dBi GAIN
45000 MHz - 50000 MHz PARABOLIC ANTENNA, 25 dBi GAIN
18000 MHz - 20800 MHz PARABOLIC ANTENNA, 25 dBi GAIN
40000 MHz - 47000 MHz PARABOLIC ANTENNA, 25 dBi GAIN
26500 MHz - 31000 MHz PARABOLIC ANTENNA, 25 dBi GAIN
|
Skyworks Solutions, Inc.
SKYWORKS SOLUTIONS INC
|
| HW8185 |
40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| AWB7225 |
860 MHz to 894 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
