| PART |
Description |
Maker |
| BCF29 BCF30 |
CONNECTOR 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP general purpose transistors
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PDTA115ES PDTA115E PDTC115EU PDTA115EE PDTA115EEF |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
PDTA115E series; PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NSBA123JF3T5G NSBA123TF3T5G NSBA143EF3T5G NSBA143Z |
BRT, PNP, 50 V, 100 mA, 100 k, none, SOT-1123 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Digital Transistors (BRT)
|
ON Semiconductor
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 M7-TP |
PNP Silicon Epitaxial Transistors
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components
|
| BC557CG BC557CZL1G BC556B07 |
Amplifier Transistors PNP Silicon 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| PBLS6021D |
60 V, 1.5 A PNP BISS loadswitch 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BC857 BC858B BC857B BC856 BC856B BC856A BC857C BC8 |
100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP general purpose transistors
|
NXP Semiconductors N.V.
|
| BC857W BC857BW BC857CW BC858W BC858W/T3 BC856AW |
100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR PLASTIC, SC-70, 3 PIN
PNP general purpose transistors
|
NXP Semiconductors N.V.
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| PUMD24 PEMD24 |
NPN/PNP resistor-equipped transistors R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors
|
| SDH03 |
PNP NPN Darlington H-bridge
PNP NPN Darlington Transistors (H-bridge)(PNP NPN达林顿晶体管(H桥）) 1.5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
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