| PART |
Description |
Maker |
| 2SB507 2SB507F |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
POWER TRANSISTORS(3.0A/60V/30W)
POWER TRANSISTORS(3.0A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SB1184 2SB1185 2SB1243 A5800349 2SB1185F |
Power Transistor (-60V, -3A)
From old datasheet system
Power Transistor (-60V/ -3A)
|
Rohm
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
| 2SA2088 |
Medium power transistor ( 60V/0.5A)
Medium power transistor (−60V, −0.5A)
Medium power transistor (-60V, -0.5A)
|
ROHM[Rohm]
|
| 2SC3254 2SC3254S |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB
60V/7A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SA1843 2SA1843M 2SA1843L |
Silicon power transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|园区
|
NEC Corp.
|
| RFP3055LE RFD3055LESM RFD3055LE FN4044 RFD3055LESM |
11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
11A 60V 0.107 Ohm Logic Level N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| 2SC5881 |
Power transistor (60V, 5A)
|
Rohm
|
| 2SC58242 |
Power transistor (60V, 3A)
|
Rohm
|
| 2SB1655 |
Power Transistor (-60V/ -3A)
|
ROHM
|
| 2SC5824 |
Power transistor (60V, 3A)
|
Rohm CO.,LTD.
|
