| PART |
Description |
Maker |
| 33882 |
Six-Output Low-Side Switch with SPI and Parallel Input Control
|
飞思卡尔半导体(中国)有限公司
|
| MC33882DH/R2 MC33882FC/R2 |
Six-Output Low-Side Switch with SPI and Parallel Input Control
|
Motorola, Inc.
|
| MC33882VWR2 33882 MC33882DH MC33882DHR2 MC33882EP |
Six-Output Low-Side Switch with SPI and Parallel Input Control
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MC33880 MC33880DW_R2 MC33880DWB_R2 |
0.55mOhm; RDS(on) CONFIGURABLE EIGHT OUTPUT SWITCH WITH SPI I/O CONTROL
CONFIGURABLE OCTAL SERIAL SWITCH WITH SERIAL PERIPHERAL INTERFACE
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| AT25HP512W2-10SI-1.8 AT25HP512W2-10SI-2.7 AT25HP51 |
SPI Serial EEPROMs 64K X 8 SPI BUS SERIAL EEPROM, PDSO16
SPI Serial EEPROMs 64K X 8 SPI BUS SERIAL EEPROM, DSO8
128-byte Page Mode Only for Write Operations
|
Atmel, Corp.
ATMEL Corporation
http://
|
| ADXRS800 |
High Performance, SPI Digital Output, Angular Rate Sensor
|
Analog Devices
|
