| PART |
Description |
Maker |
| MSM27C3252CZ MSM27C32B52CZ |
2097152-Word x 16-Bit or 4194304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No
4,194,304 WORD x BIT DYNAMIC RAM
4194304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MH2S64CWZTJ-12 MH2S64CZTJ-12 MH2S64CZTJ-15 MH2S64C |
134217728-BIT (2097152-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M5V208AKR M5M5V208AKV D99016 M5M5V208AKR-55LW |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M4V64S30ATP-10L M5M4V64S30ATP-8A M5M4V64S30ATP-8 |
From old datasheet system
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
2097152 WORDS x 32 BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM514100DLS-6 HM514100DLS-7 HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 60ns
4,194,304-word x 1-bit dynamic RAM, 70ns
4,194,304-word x 1-bit dynamic RAM, 80ns
|
Hitachi Semiconductor
|
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
