| PART |
Description |
Maker |
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| 2SA1617 |
Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V
|
TY Semiconductor Co., Ltd
|
| MJE702 MJE700 MJE701 MJE703 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSE700 KSE703 KSE701 KSE702 |
Monolithic Construction With Built-in Base- Emitter Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| OP750A OP750B OP750C OP750D |
NPN Pho totransistor with Base- Emitter Resistor
|
Optek Technology
|
| 2SB852 |
Darlington connection for high DC current gain. between base and emitter.
|
TY Semiconductor Co., Ltd
|
| BSS63R |
SOT23 PNP silicon planar Emitter-base voltage VEBO -6 V
|
TY Semiconductor Co., Ltd
|
| OP793 OP798 |
NPN Pho to tran sis tor with Base- Emitter Resistor
|
OPTEK Technologies
|
| MJ10005 |
NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
New Jersey Semi-Conduct...
|
| MJ10009 MJ10008 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
|
BOCA[Boca Semiconductor Corporation]
|
| MJ10005-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
