| PART |
Description |
Maker |
| IDT70824S_L IDT70824S45PFI IDT70824L IDT70824L20G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory)
HIGH SPEED 64K (4K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| SCM6946 MCM6946 |
512K x 8 Bit Static Random Access Memory
512K x 8 Bit Static Random Access Memory
512Kx8 Bit Static Random Access Memory(512Kx8位静态RAM)
|
Motorola, Inc.
|
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| MCM6227B MCM6227BWJ35R2 MCM6227BWJ35 MCM6227BWJ25R |
1M x 1 Bit Static Random Access Memory 1M X 1 STANDARD SRAM, 35 ns, PDSO28
1M x 1 Bit Static Random Access Memory
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola Inc]
|
| MCM4116B MCM4116 |
16,384 BIT DYNAMIC RANDOM ACCESS MEMORY
|
Motorola, Inc
|
| K1S1616B1A-I K1S1616B1A K1S1616B1A-BI70 K1S1616B1A |
1Mx16 bit Uni-Transistor Random Access Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| MCM6726C MCM6726CWJ6 MCM6726CWJ6R MCM6726CWJ7 MCM6 |
128K x 8 Bit Fast Static Random Access Memory
|
MOTOROLA[Motorola, Inc]
|
| MCM6729CWJ7R MCM6729C MCM6729CWJ6 MCM6729CWJ6R MCM |
256K x 4 Bit Fast Static Random Access Memory
|
MOTOROLA[Motorola, Inc]
|
| MCM6728BWJ8R MCM6728B MCM6728BWJ10 MCM6728BWJ10R M |
256K x 4 Bit Fast Static Random Access Memory
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| K1S3216B1C K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
