PART |
Description |
Maker |
IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A) Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 0.435ohm,身份证\u003d 8.0A TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 8A条(丁)|63AB
|
International Rectifier, Corp.
|
IRF634S IRF634STRL IRF634STRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A) Power MOSFET(Vdss=250V/ Rds(on)=0.45ohm/ Id=8.1A)
|
IRF[International Rectifier]
|
MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN Complementary Silicon Power Transistors Power 10A 250V Discrete PNP
|
ON Semiconductor
|
IRF634 IRF634PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET? Power MOSFET Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
|
IRF[International Rectifier]
|
STS1C1S250 |
N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
FQP16N25C FQPF16N25C |
250V N-Channel MOSFET 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQI9N25C FQB9N25C FQB9N25CTM FQI9N25CTU |
250V N-Channel Advance Q-FET C-Series 250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRHG8214 2071 IRHG3214 IRHG4214 IRHG7214 IRHG8214N |
250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package 0.5 A, 250 V, 2.4 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB 250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package 250V Quad N-Channel MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET THRU-HOLE From old datasheet system
|
IRF[International Rectifier] http://
|
44R01-1131-150 44R01-3131-150 44R01-1151-150 |
10A, 250V DC, FEMALE AND MALE, MAINS POWER CONNECTOR, QUICK CONNECT 10A, 250V DC, FEMALE AND MALE, MAINS POWER CONNECTOR, SOLDER
|
POWER DYNAMICS INC
|
IRF634B IRFS634B IRF634BFP001 |
250V N-Channel B-FET / Substitute of IRF634 & IRF634A 250V N-Channel MOSFET
|
Samsung semiconductor FAIRCHILD[Fairchild Semiconductor]
|
IRFR12N25DPBF IRFU12N25DPBF IRFR13N20DTRPBF |
High frequency DC-DC converters HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26ヘ , ID = 14A ) HEXFET Power MOSFET ( VDSS = 250V , RDS(on)max = 0.26Ω , ID = 14A )
|
International Rectifier
|